- silicide interface
- silicide interface ME Silicidgrenzschicht f
English-German dictionary of Electrical Engineering and Electronics. 2013.
English-German dictionary of Electrical Engineering and Electronics. 2013.
MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
Ohmic contact — An ohmic contact is a region on a semiconductor device that has been prepared so that the current voltage (I V) curve of the device is linear and symmetric. If the I V characteristic is non linear and asymmetric, the contact is not ohmic, but is… … Wikipedia
advanced ceramics — ▪ ceramics Introduction substances and processes used in the development and manufacture of ceramic materials that exhibit special properties. As is pointed out in the article ceramic composition and properties, ceramics are… … Universalium
Indium — Not to be confused with Iridium. cadmium ← indium → tin Ga ↑ In ↓ Tl … Wikipedia
MOSI — may refer to: MoSi molybdenum silicide, an important material in the semiconductor industry MOSI Master Out Slave In, a signal on the Serial Peripheral Interface Bus MOSI protocol, an extension of the basic MSI cache coherency protocol Museum of… … Wikipedia
Diffusion barrier — A diffusion barrier is a thin layer (usually micrometres thick) of metal usually placed between two other metals. It is done to act as a barrier to protect either one of the metals from corrupting the other.[1] Adhesion of a plated metal layer to … Wikipedia